| PART |
Description |
Maker |
| 310-024109-011 024109-011 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-024107-021 024107-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025105-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SC5434 2SC5434-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| LT6604CUFF-5PBF |
Dual Very Low Noise, Differential Ampli?er and 5MHz Lowpass Filter
|
Linear Technology
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SC5435 |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC Corp.
|
| 2SD0814A |
For High Breakdown Voltage Low-Frequency And Low-Noise
|
Panasonic Semiconductor
|
| 2SC3356 |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
Unisonic Technologies
|
| 2SC2369 |
High Frequency Low Noise Amplifier
|
NEC
|
| 2SC5379 |
SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-VOLTAGE LOW-NOISE HIGH-FREQUENCY OSCILLATION)
|
Panasonic Corporation
Panasonic Semiconductor
|
